1/9 february 2003 STB80NE03L-06 STB80NE03L-06-1 n-channel 30v - 0.005 w -80ad 2 pak / i 2 pak stripfet? power mosfet (1) i sd 804a, di/dt 300a/s, v dd v (br)dss ,t j t jmax. n typical r ds (on) = 0.005 w n exceptional dv/dt capability n low gate charge 100c n 100% avalanche tested description this power mosfet is the latest development of stmicroelectronics unique single feature size? strip-based process. the resulting transis- tor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n motor control,audio amplifiers n dc-dc & dc-ac converters n automotive environment (injection, abs, air-bag, lampdrivers, etc.) absolute maximum ratings ( l ) pulse width limited by safe operating area type v dss r ds(on) i d STB80NE03L-06 STB80NE03L-06-1 30 v 30 v < 0.006 w < 0.006 w 80 a 80 a symbol parameter value unit v ds drain-source voltage (v gs =0) 30 v v dgr drain-gate voltage (r gs =20k w ) 30 v v gs gate- source voltage 20 v i d drain current (continuos) at t c = 25c 80 a i d drain current (continuos) at t c = 100c 60 a i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c = 25c 150 w derating factor 1 w/c dv/dt (1) peak diode recovery voltage slope 7 v/ns t stg storage temperature C55to175 c t j max. operating junction temperature d 2 pak 1 3 1 2 3 i 2 pak internal schematic diagram .com .com .com
STB80NE03L-06 / STB80NE03L-06-1 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 1 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 80 a e as single pulse avalanche energy (starting t j = 25 c, i d =i ar ,v dd =15v) 600 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs =10v,i d =40a 0.005 0.006 w v gs = 4.5 v, i d =40a 0.008 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =40a 30 50 s c iss input capacitance v ds =25v,f=1mhz,v gs =0 6500 pf c oss output capacitance 1500 pf c rss reverse transfer capacitance 500 pf .com .com .com .com
3/9 STB80NE03L-06 / STB80NE03L-06-1 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =15v,i d =40a r g = 4.7 w v gs =4.5v (see test circuit, figure 3) 40 55 ns t r rise time 260 350 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =24v,i d = 80a, v gs =5v 95 30 44 130 nc nc nc symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =24v,i d =80a, r g =4.7 w, v gs =5v (see test circuit, figure 3) 70 165 250 95 220 340 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 80 a i sdm (2) source-drain current (pulsed) 320 a v sd (1) forward on voltage i sd =80a,v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100a/s, v dd =15v,t j = 150c (see test circuit, figure 5) 75 0.14 4 ns nc a safe operating area thermal impedence .com .com .com .com
STB80NE03L-06 / STB80NE03L-06-1 4/9 gate charge vs gate-source voltage static drain-source on resistance transconductance output characteristics transfer characteristics capacitance variations .com .com .com .com
5/9 STB80NE03L-06 / STB80NE03L-06-1 normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature .com .com .com .com
STB80NE03L-06 / STB80NE03L-06-1 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load .com .com .com .com
7/9 STB80NE03L-06 / STB80NE03L-06-1 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0o 8o d 2 pak mechanical data 3 .com .com .com .com
STB80NE03L-06 / STB80NE03L-06-1 8/9 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data .com .com .com .com
9/9 STB80NE03L-06 / STB80NE03L-06-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com .com .com .com
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